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| e PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 925-960 MHz Class AB Characteristics 50% Min Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride Passivated Gain vs. Frequency (as measured in a broadband circuit) 12 VCC = 25 V 11 Gain (dB) ICQ = 200 mA Pout = 60 W 10 201 48 LO TC OD E 9 8 920 925 930 935 940 945 950 955 960 965 Frequency (MHz) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 8.0 145 0.83 -40 to +150 1.2 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20148 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5.0 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C Min 8.0 50 -- Typ 9.5 -- -- Max -- -- 10:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 925 940 960 R 3.4 3.2 3.0 Z Source jX -4.2 -4.7 -5.5 R 3.8 3.5 3.3 Z Load jX 0.6 1.2 2.0 2 5/19/98 e Typical Performance Efficiency vs. Frequency 80 70 PTB 20148 (as measured in a broadband circuit) Efficiency (%) 60 50 40 30 20 920 VCC = 25 V ICQ = 200 mA Pout = 60 W 925 930 935 940 945 950 955 960 965 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20148 Uen Rev. D 09-28-98 3 |
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